AYD Advanced Materials, Inc. participated in the 23rd International Conference on Silicon Carbide and Related Materials (ICSCRM 2026), held at PACIFICO YOKOHAMA North in Yokohama, Japan, from September 27 to October 2, 2026. In the Industrial Session, AYD presented carbon-felt insulation materials for semiconductor hot zones and its approach to manufacturing quality management.
- Conference
- ICSCRM 2026
- Dates
- September 27 to October 2, 2026
- Location
- PACIFICO YOKOHAMA North · Yokohama, Japan
- Presentation
- Industrial Session
Presentation theme
One integrated chain. Two felt families. Pitch & Rayon.
Density consistency at production scale
The presentation focused on density consistency in production-scale manufacturing. Drawing on production records, AYD described how process information, material density and finished-part traceability can be connected.
For semiconductor hot-zone insulation, a single inspection result is only part of the picture. Understanding variation across part specifications, batches and production stages also matters. AYD shared its manufacturing and data-management practices as a basis for further technical discussion.
Pitch and rayon: two material routes
Under the theme “One integrated chain. Two felt families. Pitch & Rayon.”, AYD introduced integrated molding with pitch-based short fibers, rayon-based long-fiber soft felt and its solidified-forming route, outlining an integrated approach from feedstock selection to forming and machining.
These routes offer different structural characteristics and processing options. Using rigid felt, soft felt and custom insulation components as examples, AYD discussed material selection in relation to hot-zone geometry, operating conditions and process requirements.
Continuing support for semiconductor hot zones
The conference provided an opportunity to exchange perspectives with industry and research participants working on SiC and related materials. AYD will continue to develop its manufacturing and technical support around material consistency, process traceability and application requirements.
We thank the organizers and conference participants, and welcome further discussions on insulation materials for SiC crystal growth and related high-temperature processes.
Conference information and official program：Conference websiteIndustrial Session program